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Selective—Area Laser Photodeposition of Transparent Conductive SnO2 Films

Published online by Cambridge University Press:  25 February 2011

R.R. Kunz ,
M. Rothschild  and
D. J. Ehrlich
R.R. Kunz
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, MA 02173
M. Rothschild
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, MA 02173
D. J. Ehrlich
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, 244 Wood Street, Lexington, MA 02173
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Abstract

The deposition of SnO2 films has been demonstrated using an ArF (193-nm) excimer laser to drive the photochemical reactions of mixed SnCI4 and N2O vapors. Without any annealing, films 100 nm thick grown on room—temperature substrates have resistivities as low as 0.04 Ω—cm. The optical bandgap of 3.20 ev and transmission cutoff wavelength of 330 nm compare favorably with films obtained using alternate higher temperature techniques. The maximum temperature excursion during the 20—ns laser pulse is estimated to be 300 to 400 ºC.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 129: Symposium B – Laser and Particle-Beam Modification of Chemical Processes on Surfaces , 1988 , 447
Copyright
Copyright © Materials Research Society 1989

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References

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