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Self-aligned TiSi2/Si Hetero-nanocrystal Nonvolatile Memory

Published online by Cambridge University Press:  01 February 2011

Yan Zhu ,
Bei Li  and
Jianlin Liu
Yan Zhu
Affiliation:
yzhu@ee.ucr.edu, University of California, Riverside, Electrical Engineering, 900 University Ave, Riverside, CA, 92507, United States, 951-827-7131, 951-827-2425
Bei Li
Affiliation:
bli@ee.ucr.edu, University of California, Riverside, Department of Electrical Engineering, 900 University Ave, Riverside, CA, 92521, United States
Jianlin Liu
Affiliation:
jianlin@ee.ucr.edu, University of California, Riverside, Department of Electrical Engineering, 900 University Ave, Riverside, CA, 92521, United States
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Abstract

This work describes a novel nonvolatile memory device with self-aligned TiSi2/Si hetero-nanocrystal charge storage nodes. The TiSi2/Si hetero-nanocrystals can be readily fabricated using industrial standard self-aligned silicidation technique based on Si nanocrystals deposited on ultra-thin tunnel oxide with LPCVD. As compared with a Si nanocrystal memory device, a TiSi2/Si hetero-nanocrystal memory device exhibits faster programming and erasing, and longer retention time.

Keywords

memorynanostructuremicroelectronics
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I02-05
Copyright
Copyright © Materials Research Society 2007

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