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A Self-Interstitial Related Model for the Formation of Thermal Donors in Silicon

Published online by Cambridge University Press:  26 February 2011

D. Mathiot
D. Mathiot*
Affiliation:
CNET-CNS - BP : 98 - Chemin du Vieux Chêne - 38243 Meylan Cedex - France.
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Abstract

A new kinetic model is presented for the formation of thermal donors in silicon. This model is based on the aggregation of the self-interstitials generated by oxygen precipitation, on preexisting oxygen related nuclei.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 189
Copyright
Copyright © Materials Research Society 1988

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References

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