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Shallow-impurity-related photoluminescence in homoepitaxial GaN

Published online by Cambridge University Press:  17 March 2011

V. Kirilyuk ,
M. Zielinski ,
P.C.M. Christianen ,
A.R.A. Zauner ,
J.L. Weyhera ,
P.R. Hageman  and
P.K. Larsen
V. Kirilyuk
Affiliation:
Research Institute for Materials, University of Nijmegen, Toernooiveld 1, 6525 ED Nijmegen, The Netherlands
M. Zielinski
Affiliation:
Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw, Poland
P.C.M. Christianen
Affiliation:
Research Institute for Materials, University of Nijmegen, Toernooiveld 1, 6525 ED Nijmegen, The Netherlands
A.R.A. Zauner
Affiliation:
Research Institute for Materials, University of Nijmegen, Toernooiveld 1, 6525 ED Nijmegen, The Netherlands
J.L. Weyhera
Affiliation:
High Pressure Research Center, Polish Academy of Science, ul. Sokolowska 29/37, 01-142 Warsaw, Poland
P.R. Hageman
Affiliation:
Research Institute for Materials, University of Nijmegen, Toernooiveld 1, 6525 ED Nijmegen, The Netherlands
P.K. Larsen
Affiliation:
Research Institute for Materials, University of Nijmegen, Toernooiveld 1, 6525 ED Nijmegen, The Netherlands
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Abstract

Photoluminescence (PL) spectra of GaN epitaxial layers grown on vicinal (0001) GaN substrates (i.e. N-polar) demonstrate high optical quality showing free exciton transitions in addition to narrow bound-exciton peaks (line width 1-2 meV). In contrast, N-polar films deposited on exactly oriented (0001) substrates exhibit a broad PL emission resulting from high free carrier concentrations. As derived from Secondary Ion Mass Spectroscopy (SIMS), exact (0001) epilayers reveal very high concentrations of oxygen (1.5×1019 atom/cm3), which are about one order of magnitude higher then in the layers grown on a 4°-off substrate. It is therefore concluded that oxygen is responsible for the high free carrier concentration and could be a dominant shallow donor in the homoepitaxial N-polar films. It is also shown that incorporation of oxygen strongly depends on the polarity of the films (Ga or N). Concentrations of other impurities, such as Si, C and H are found to be similar for homoepitaxial films of both polarities being consistent with the results of exciton-related PL.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 639: Symposium G – GaN and Related Alloys-2000 , 2000 , G6.23
Copyright
Copyright © Materials Research Society 2001

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References

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