Hostname: page-component-848d4c4894-jbqgn Total loading time: 0 Render date: 2024-07-08T02:33:52.295Z Has data issue: false hasContentIssue false
  • English
  • Français

Short Channel Length Planar Tft's Using Amorphous Silicon Alloys

Published online by Cambridge University Press:  28 February 2011

M. Yang ,
Z. Yaniv ,
M. Vijan  and
V. Cannella
M. Yang
Affiliation:
Ovonic Display Systems, Inc., 1896 Barrett Street, Troy, Michigan 48084
Z. Yaniv
Affiliation:
Ovonic Display Systems, Inc., 1896 Barrett Street, Troy, Michigan 48084
M. Vijan
Affiliation:
Ovonic Display Systems, Inc., 1896 Barrett Street, Troy, Michigan 48084
V. Cannella
Affiliation:
Ovonic Display Systems, Inc., 1896 Barrett Street, Troy, Michigan 48084
Get access

Abstract

There is a rapid growth of interest in the application of amorphous silicon alloy thin film devices to large area microelectronic circuits. Increased current levels are a constant goal since gains in device current result in proportional gains in power and speed. Mobility limitations in amorphous silicon thin film transistors have directed interest toward short conduction channel devices to achieve higher current levels; furthermore, compatibility with large area processing makes photolithography with 10μm feature size very attractive. Consequently, innovative techniques, which define channel lengths by processing parameters rather than by mask feature size are necessary. Previous work has applied such techniques to vertical structure TFT's which define channel lengths by the vertical height of deposited layers. Here, we report on a technique which achieves short channel lengths in planar structures using etching parameters to define short channel lengths. Amorphous silicon alloy TFTs have been fabricated with channel lengths of ≈2μm which reach currents of lma. These techniques broaden the range of application of amorphous silicon alloy TFTs by providing devices capable of operating at higher currents and higher speeds.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 647
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Ovshinsky, S.R., SPIE Proc., 2, 617 (1986).Google Scholar
2. Yaniv, Z., Hansell, G., Vijan, M., Cannella, V., MRS Sym. Proc., Vol.33, North Holland, 1984, pp. 293–296.Google Scholar
3. Yaniv, Z., Cannella, V., Hansell, G., Willner, C., and Vijan, M., Mol. Cryst. Liq. Cryst., 124 (1986).Google Scholar
4. Lakatos, A.I., Conf. Records, 1982 Int. Display Conf., SID, 146 (1982).Google Scholar
5. Yaniv, Z., Cannella, V., Hansell, G. and Vijan, M., MRS Symp. Proc., Vol;. 49, 1985, pp. 353–359.Google Scholar
6. Ast, D.G., IEEE Trans. on Elec. Dev., ED–30, 5d32 (1983).Google Scholar
7. Thompson, M.J., J. Vac. Sci. Tech., B 2(4), 827–834, 1984.Google Scholar
8. Matsumura, M., US-Japan Joint Seminar on Technological Applications of letrahedral Amorphous Solids, Palo Alto, CA, (1982).Google Scholar