Hostname: page-component-7479d7b7d-fwgfc Total loading time: 0 Render date: 2024-07-11T09:19:03.650Z Has data issue: false hasContentIssue false
  • English
  • Français

Si Implantation and Annealing OF GaN FOR n-Type Layer Formation

Published online by Cambridge University Press:  15 February 2011

B. Molnar ,
A. E. Wickenden  and
M. V. Rao
B. Molnar
Affiliation:
Naval Research Laboratory, Washington, DC, 20375-5347
A. E. Wickenden
Affiliation:
Naval Research Laboratory, Washington, DC, 20375-5347
M. V. Rao
Affiliation:
ECE Department, George Mason University, Fairfax, VA 22030
Get access

Abstract

High dose Si has been implanted into MOCVD grown high resistivity and n-type GaN in the 26–500°C temperature range. The implant activation varies widely (30 −>100%) depending on, what energy level is assigned to the Si, the implantation and annealing temperatures, and the quality of the substrate. The usable maximum temperature for activation is limited by the severe decomposition of the GaN. After 1050°C 15s RTA Ga liquid droplet formation has been observed by SEM. This decomposition changes the surface morphology but did not introduce measurable change in the electrical properties up to 1150°C /120s RTA.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 183
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Binari, S.C., Dietrich, H.B., Kelner, G., Rowland, L.B., Doverspike, K. and Wickenden, D.K., J. Appl. Phys. 78, p. 3008 (1995).Google Scholar
2. Pearton, S.J., Vartuli, C.B., Zolper, J.C., Yuan, C. and Stall, R.A., Appl. Phys. Lett. 67, p. 1435 (1995).Google Scholar
3. Rubin, M., Newman, N., Chan, J.S., Fu, T.C. and Ross, J.T., Appl. Phys. Lett. 64, p. 64 (1994).Google Scholar
4. Gotz, W., Johnson, N.M., Bour, D.P., Chen, C., Liu, H., Kuo, C., and Imler, W., Mat. Res. Soc. Symp. Proc. Vol.395, to be published.Google Scholar
5. Molnar, B., Appl. Phys. Lett. 36, p. 927 (1980).Google Scholar
6. Groh, R., Gerey, G., Bartha, L. and Pankove, J.I., Phys. Stat. Sol. (a) 26, p. 353 (1974).Google Scholar
7. Moromito, Y., J. Electrochem. Soc. 121, p. 13839 (1974).Google Scholar
8. Chin, V.W.L., Tansley, T.L. and Osotchan, T., J. Appl. Phys. 75, p. 7386 (1994).Google Scholar