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Silicidation Strategy Of Sub-0.1 μm Junctions for Deep Submicron Devices

Published online by Cambridge University Press:  15 February 2011

Jiunn-Yann Tsai ,
Carlton M. Osburn  and
Steve L. Hsia
Jiunn-Yann Tsai
Affiliation:
ECE Department, North Carolina State University, Raleigh, NC 27695–7911 Currently at Research and Development, LSI Logic Inc., Santa Clara, CA 95054
Carlton M. Osburn
Affiliation:
ECE Department, North Carolina State University, Raleigh, NC 27695–7911
Steve L. Hsia
Affiliation:
Semiconductor Process and Device Center, Texas Instruments Inc., Dallas, TX 75243
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Abstract

Two major concerns for silicidation of ultra-shallow junctions, namely the silicon-consumption- induced junction leakage and the series resistance increase, were compared among conventional post-junction-silicide (PJS) contact, silicide-as-a-diffusion-source (SADS) contact, Silicon-On-Insulator (SOI) contact, and elevated-source-drain (ESD) contact. Even though we found that ESD contacts would be the ultimate solution for both problems, SOI and SADS contacts provide better resistance to silicon-consumption-induced series resistance increase over conventional PJS contact because both are able to maintain a high dopant concentration at the silicide/silicon interface and thus a low specific contact resistivity. While there is no junction leakage concern for SOI contact, the SADS junction is also distinguished by low leakage owing to its lack of implant damage in the silicon substrate and uniformly doped junction along the silicide/silicon interface contour. MOSFET devices with SADS source/drain were demonstrated with quarter-μm technology. Epitaxial cobalt disilicide (CoSi2) was formed using the Ti/Co bilayer technique as a diffusion source. While both ESD and SOI processes still suffer from process complexity, integration and materials issues, we conclude that SADS contacting is a promising alternative for deep submicron devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 402: Symposium H – Silicide Thin Films-Fabrication, Properties and Applications , 1995 , 245
Copyright
Copyright © Materials Research Society 1996

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