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Silicon Surface Cleaning for Low Temperature Epitaxial Growth

Published online by Cambridge University Press:  21 February 2011

John O. Borland ,
Carol Riggi  and
Faye Brocious
John O. Borland
Affiliation:
Genus, Inc., 1139 Karlstad Dr., Sunnyvale, CA., 94089
Carol Riggi
Affiliation:
Applied Materials, Inc., 3050 Bowers Ave., Santa Clara, CA., 95054
Faye Brocious
Affiliation:
Applied Materials, Inc., 3050 Bowers Ave., Santa Clara, CA., 95054
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Abstract

The effects of various ex-situ and in-situ silicon surface cleaning techniques on low temperature epitaxial growth down to 650°C have been characterized. For ex-situ cleaning, wet HF cleans with and without a chemically grown oxide were compared along with vapor HF cleaning. In-situ cleaning was achieved by rapid thermal cleaning (RTC), a 1min. hydrogen bake at various temperatures. When the residual surface oxide was >2e15/cm2 or fluorine >4e13/cm2, a continuous interface was observed and epitaxial growth could not be achieved (conical/columnar poly deposition). By optimizing the in-situ RTC process for either wet or vapor HF ex-situ clean, high quality low temperature epitaxial growth was realized.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 315: Symposium Y – Surface Chemical Cleaning and Passivation for Semiconductor Processing , 1993 , 71
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1) Asai, S., Symposium on Advanced Science and Technology of Silicon Materials, Japan Society for the Promotion of Science, Kona, Hawaii, Nov. 1991, p.l.Google Scholar
2) Borland, J.O., IEEE IEDM-87, section 2.1, Dec. 1987, p.12.Google Scholar
3) Borland, J.O., IEEE BCTM-92, section 1.1, Oct. 1992, p.16.Google Scholar
4) Borland, J.O., Symposium on Advanced Science and Technology of Silicon Materials, Japan Society for the Promotion of Science, Kona, Hawaii, Nov. 1991, p.306.Google Scholar
5) Wong, M., Moslehi, M. and Reed, D., J. Electrochem. Soc., Vol. 138, No. 6, June 1991, p.1799.Google Scholar
6) Miki, N., Kikuyama, H., Kawanabe, I., Miyashita, M. and Ohmi, T., IEEE Trans. Elec. Dev., Vol. 37, No. 1, Jan. 1990, p.107.Google Scholar