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A Simple Model for the Transient, Enhanced Diffusion of Ion-Implanted Phosphorus in Silicon

Published online by Cambridge University Press:  25 February 2011

F. F. Morehead  and
R.T. Hodgson
F. F. Morehead
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y.10598
R.T. Hodgson
Affiliation:
IBM Thomas J. Watson Research Center, Yorktown Heights, N.Y.10598
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Abstract

Unlike As, B as well as P implanted into Si exhibits transient, enhanced diffusion. For example, when P implants are annealed for times of ~1 s at temperatures > 900°C, we observe a large movement of dopant toward the furnace of the Si wafer which is nearly independent of temperature 1050-1200°C. Once the temperature rises above 1200-1250°C the diffusion is similar to that normally observed. We model the experimental results as a transient, enhanced diffusion of a mobile component, about half the total phosphorus implant, distributed deeper in the bulk than the total P distribution. This mobile component may be linked to a large super-saturation of self-interstitials produced by the 50 keV implantation, which are expected to be left deeper in the bulk than the total dopant profile.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 341
Copyright
Copyright © Materials Research Society 1985

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References

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