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Sims Analysis of the Contamination of Porous Silicon by Ambient Air

Published online by Cambridge University Press:  15 February 2011

L T Canham  and
G W Blackmore
L T Canham
Affiliation:
DRA Electronics Division, RSRE, St Andrews Road Malvern, Worcs WR14 3PS, UK
G W Blackmore
Affiliation:
DRA Electronics Division, RSRE, St Andrews Road Malvern, Worcs WR14 3PS, UK
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Abstract

Microporous silicon layers contain an enormous surface area (> 500 m2 cm−3) that influences their structural, optical and electrical properties. When freshly etched the pore wall surface can be extremely clean and composed primarily of hydrogen and fluorine. Extended storage in ambient air however will convert this clean hydride surface into that of a contaminated native oxide.

Using dynamic SIMS profiling we demonstrate here that slow oxidation at room temperature by ambient air is accompanied by impregnation with atmospheric boron and sulphur but that levels of calcium and sodium for example, remain exceedingly low. We conclude that the pore wall surface is very efficiently protected from particulate - related airborne species but is susceptible to contamination from small molecules present in the atmosphere at trace levels.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 256: Symposia AA – Light Emission from Silicon , 1991 , 63
Copyright
Copyright © Materials Research Society 1992

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References

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