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Single Crystalline SOI Square Islands Fabricated by Laser Recrystallization Using a Surrounding Antireflection Cap and Successive Self-Aligned Isolation Utilizing the Same Cap

Published online by Cambridge University Press:  25 February 2011

R. Mukai ,
N. Sasaki ,
T. Iwai ,
S. Kawamura  and
M. Nakano
R. Mukai
Affiliation:
Fujitsu Limited, IC Development Division, Kawasaki 211, Japan
N. Sasaki
Affiliation:
Fujitsu Limited, IC Development Division, Kawasaki 211, Japan
T. Iwai
Affiliation:
Fujitsu Limited, IC Development Division, Kawasaki 211, Japan
S. Kawamura
Affiliation:
Fujitsu Limited, IC Development Division, Kawasaki 211, Japan
M. Nakano
Affiliation:
Fujitsu Limited, IC Development Division, Kawasaki 211, Japan
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Abstract

A new laser recrystallizing technique has been developedfor high density SOI-LSI's. This technique produces single crystalline silicon islands on an amorphous insulating layerwithout seed. Square windows are opened at arbitrary places in an antireflection cap over a polycrystalline film on an amorphous insulatinq layer. Grain boundaries of the polycrystalline Si in the window are removed completely at the subsequent laser-recrystallization step. Single crystalline silicon islands are formed by self-aligned etching of silicon film which was covered by the antireflection cap. This technique is an effective method for fabricating high density SOI-LSI's, since the singlecrystalline islands can be fabricated at arbitrarily selected places. Yield of the grain-boundary-free islands was 95% the size of the island is 1O x 20μm, and the irradiation oyerlap of laser-beam traces is 70%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 663
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

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