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Sol-Gel Derived Ferroelectric YMnO3 Films

Published online by Cambridge University Press:  10 February 2011

G. Teowee ,
K. C. McCarthy ,
F. S. McCarthy ,
B. H. Dietz ,
D. G. Davis Jr  and
D. R. Uhlmann
G. Teowee
Affiliation:
Donnelly Corporation, 4545 East Fort Lowell Road, Tucson, AZ 85712;
K. C. McCarthy
Affiliation:
Donnelly Corporation, 4545 East Fort Lowell Road, Tucson, AZ 85712;
F. S. McCarthy
Affiliation:
Donnelly Corporation, 4545 East Fort Lowell Road, Tucson, AZ 85712;
B. H. Dietz
Affiliation:
Donnelly Corporation, 4545 East Fort Lowell Road, Tucson, AZ 85712;
D. G. Davis Jr
Affiliation:
Donnelly Corporation, 4545 East Fort Lowell Road, Tucson, AZ 85712; nDepartment of Materials Science and Engineering, University of Arizona, Tucson, AZ 85721.
D. R. Uhlmann
Affiliation:
nDepartment of Materials Science and Engineering, University of Arizona, Tucson, AZ 85721.
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Abstract

Sol-gel derived YMnO3 films have been prepared on platinized Si wafers. Crystallization took place at firing temperatures above about 750C. The crystallized films were very conductive. YMnO3 films exhibited a dielectric constant of 23, a remanent polarization of 1.0 μC/cm2 and a coercive field of 12 kV/cm, all measured at -33C The FE loop was lossy and elliptical at room temperature but became more distinct at lower measuring temperatures or at higher measuring frequencies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 495: Symposium W – Chemical Aspects of Electronic Ceramics Processing , 1997 , 327
Copyright
Copyright © Materials Research Society 1998

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References

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