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Solid Phase Epitaxial Regrowth of Microcrystalline Si Films on a (100) Si Substrate
Published online by Cambridge University Press: 26 February 2011
Abstract
Microcrystalline Si, as produced by explosive crystallization of an amorphous Si layer on (100) Si, shows a two-stage annealing behaviour. Initially, solid phase epitaxial regrowth occurs very rapidly at temperatures at, or above 800°C. After a few seconds, the regrowth rate slows down to the value typical for alignment of poly-Si. Solid phase epitaxial regrowth of microcrystalline Si is suggested to be strongly dependent on grain size and structure.
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- Copyright © Materials Research Society 1988
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