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Solid Phase Epitaxy Process Of Ar-Ion Bombarded Silicon Surfacesand Recovery of Crystallinity by Thermal Annealing Observed With ScanningTunneling Microscopy

Published online by Cambridge University Press:  15 February 2011

Katsuhiro Uesugi ,
Masamichi Yoshimura  and
Takafumi Yao
Katsuhiro Uesugi
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
Masamichi Yoshimura
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
Takafumi Yao
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
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Abstract

The solid-phase epitaxy (SPE) process of Ar+-ion bombarded Si(001) surfaces and recovery of crystallinity by thermal annealing arestudied “in situ” by using a scanning tunneling Microscope (STM).As-bombarded surfaces consist of grains of 0.63–1.6 nm in diameter. Thegrains gradually coalesce and form clusters of 2–3.6 nm in diameter atannealing temperature of 245° C (2×1) and (1×2) reconstructed regionssurrounded by amorphous regions are partially observed on the surface byprolonged annealing, which suggests the onset of SPE. Successive observationreveals that the smoothing of the surface occurs layer by layer. Asannealing temperature is raised up to 445 °C, the amorphous layerepitaxially crystallizes up to the topmost surface, and (2×1) reconstructedsurface with Monatomic-height steps is observed. The smoothing of thesurface structures and the formation of nucleation of Si islands areobserved during annealing at 500 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 497
Copyright
Copyright © Materials Research Society 1994

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