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Solute Segregation and Dynamics of Solid-Phase Crystallization In in and Sb-Implanted Silicon*

Published online by Cambridge University Press:  15 February 2011

J. Narayan ,
G. L. Olson  and
O. W. Holland
J. Narayan
Affiliation:
State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
G. L. Olson
Affiliation:
State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
O. W. Holland
Affiliation:
State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
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Abstract

Time-resolved-reflectivity measurements have been combined with transmission electron microscopy (cross-section and plan-view), Rutherford backscattering and ion channeling techniques to study the details of laser induced solid phase epitaxial growth in In+ and Sb+ implanted silicon in the temperature range from 725 to 1500 °K. The details of microstructures including the formation of polycrystals, precipitates, and dislocations have been correlated with the dynamics of crystallization. There were limits to the dopant concentrations which could be incorporated into substitutional lattice sites; these concentrations exceeded retrograde solubility limits by factors up to 70 in the case of the Si-In system. The coarsening of dislocation loops and the formation of a/2<110>, 90° dislocations in the underlying dislocation-loop bands are described as a function of laser power.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 183
Copyright
Copyright © Materials Research Society 1982

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Footnotes

+

Hughes Research Laboratory, Malibu, California.

*

Research sponsored by the Division of Materials Sciences, U. S. Department of Energy under contract W–7405–eng–26 with Union Carbide Corporation.

References

REFERENCES

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