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Some Applications of Ion Beams in III-V Compound Semiconductor Device Fabrication

Published online by Cambridge University Press:  26 February 2011

J. P. Donnelly ,
K. K. Anderson ,
J. D. Woodhouse ,
W. D. Goodhue ,
D. Yap ,
M. C. Gaidis  and
C. A. Wang
J. P. Donnelly
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173-0073
K. K. Anderson
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173-0073
J. D. Woodhouse
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173-0073
W. D. Goodhue
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173-0073
D. Yap
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173-0073
M. C. Gaidis
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173-0073
C. A. Wang
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology Lexington, Massachusetts 02173-0073
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Abstract

Ion-beam-assisted etching of GaAs/AlGaAs and InP/GaInAsP, ion-beam disordering of GaAs/AlGaAs multiple-quantum-well structures, and ion implantation in InP are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 421
Copyright
Copyright © Materials Research Society 1989

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