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Spectroscopic Characterization and Investigation of Strained InGaAs/GaAs Heterostructures

Published online by Cambridge University Press:  25 February 2011

S.C. Shen ,
X.M. Fang  and
W. Shan
S.C. Shen
Affiliation:
Institut für Halbleiterphysik und Optik, TU Braunschweig, D-3300 Braunschweig, FRG National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai 200083, China
X.M. Fang
Affiliation:
National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai 200083, China
W. Shan
Affiliation:
National Laboratory for Infrared Physics, Chinese Academy of Sciences, Shanghai 200083, China
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Abstract

We report the comprehensive investigation and characterization of the band structure and interband transitions for the strained InxGa1−xAs/GaAs heterostructures and QW by use of a combination of- different spectroscopic techniques, that is photocurrent, photoreflectance and photoabsorption spectroscopies under low temperatures and high pressures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 221: Symposium C – Heteroepitaxy of Dissimilar Materials , 1991 , 229
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Kowalczyk, S.P., Schaffer, W.J., Kraut, E.A., and Grant, R.W., J. Vac. Sci. Technol. 20, 705 (1982).Google Scholar
2. Menendez, J., Pinczuk, A., Werder, D.J., Sputz, S.K., Miller, R.C., Sivco, D.L., and Cho, A.Y., Phys. Rev. B 36, 8165 (1987).CrossRefGoogle Scholar
3. Orders, P.J. and Usher, B.F., Appl.Phys. Lett. 50, 9 (1987).Google Scholar
4. Walle, C.G.Van de and Martin, R.M., J. Van. Sci. Technol. B 4, 1055 (1986).CrossRefGoogle Scholar
5. Tersoff, J., Phys. Rev. Lett. 56, 2755 (1986).Google Scholar
6. Roth, A.P., Masut, R.A., Sacilotti, M., D'Arcy, P.J., Lepage, Y., Sproule, G.J., and Mitchell, D.F., Superlatt. Microstruct. 2, 507 (1986).Google Scholar
7. Anderson, N.G., Laidig, W.D., Kolbas, R.M., and Lo, Y.C., J. Appl. Phys. 60, 2361 (1986).CrossRefGoogle Scholar
8. Joyce, M.J., Johnson, M.J., Cal, M., and Usher, B.F., Phys. Rev. B 38, 10978 (1988).CrossRefGoogle Scholar
9. Marzin, J.Y., Chatasse, M.N., and Sermage, B., Phys. Rev. B 31, 8289 (1985).Google Scholar
10. Ji, G., Huang, D., Reddy, U.K., Henderson, T.S., Houdre, R., and Morkoc, H., J. Appl. Phys. 62, 3366 (1987).CrossRefGoogle Scholar
11. Fang, X.M., Shen, S.C., Hou, H.Q., Feng, W., Zhou, J.M., and Koch, F., Surf. Sci. 228, 351 (1990).CrossRefGoogle Scholar
12. Fang, X.M., Li, D., and Shen, S.C. (unpublished).Google Scholar
13. Ji, G., Dobbelaer, W., Huang, D., and Morkoc, H., Phys. Rev. B 39, 3216 (1989).Google Scholar
14. Fortin, E., Hua, B.Y., and Roth, A.P., Phys. Rev. B 39, 10887 (1989).Google Scholar
15. Jones, E.D., Ackermann, H., Schinberm, J.E. Drummond, T.J., Dawson, L.R., and Fritz, I.J., Appl. Phys. Lett. 47, 492 (1985).Google Scholar
16. Wang, L.J., Hou, H.Q., Zhou, J.M., Tang, R.M., Lu, Z.D., Wang, Y.Y., and Huang, Y., Avta Phys. Sinica 38, 1086 (1989) (in Chinese).Google Scholar
17. Bastard, G., Phys. Rev. B 25, 7584 (1982).Google Scholar
18. Shen, S.C., Fang, X.M., Shan, W., 20th intern. conf. on Phys. of semicond. P.921 (1990).Google Scholar
19. Shan, W., Fang, X.M. and Shen, S.C., Appl. Phys. Lett., 57, 475 (1990).Google Scholar