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Spectroscopic Characterization of Nanoscale Modification of Passivated Si(100) Surface by STM

Published online by Cambridge University Press:  21 February 2011

F. PÉRez-Murano ,
N. Barniol  and
X. Aymerich
F. PÉRez-Murano
Affiliation:
Dept.Física-Electrònica. Universitat Autònoma de Barcelona. 08193-Bellaterra., SPAIN
N. Barniol
Affiliation:
Dept.Física-Electrònica. Universitat Autònoma de Barcelona. 08193-Bellaterra., SPAIN
X. Aymerich
Affiliation:
Dept.Física-Electrònica. Universitat Autònoma de Barcelona. 08193-Bellaterra., SPAIN
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Abstract

The electrochemical modification of H-passivated Si(100) surface is produced and characterized by Scanning Tunneling Microscopy and Spectroscopy (STM/STS) operating in air. In order to better understand this nanometer scale modification, we have characterized spectroscopically the modified region. From the current-voltage (I/V) curves, dI/dV versus V curves and tip to sample spacing versus voltage (s/V) curves (at constant current) we have concluded that the modification induces a local electrochemical change on the surface, which in turn produces both, a decrease of the local density of surface states and a variation of the band bending in the silicon surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 332: Symposium U – Determining Nanoscale Physical Properties of Materials by Microscopy and Spectroscopy , 1994 , 549
Copyright
Copyright © Materials Research Society 1994

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References

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