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Spectroscopic Ellipsometry as a Non-Destructive Technique for Characterization of Atomic-Scale Interfaces

Published online by Cambridge University Press:  25 February 2011

J.L. Stehle ,
J.P. Piel ,
J.H. Lecat ,
C. Pickering  and
L.C. Hammond
J.L. Stehle
Affiliation:
SOPRA, 26/68 rue Pierre Joigneaux, 92270 BOISCOLOMBES, FRANCE
J.P. Piel
Affiliation:
SOPRA, 26/68 rue Pierre Joigneaux, 92270 BOISCOLOMBES, FRANCE
J.H. Lecat
Affiliation:
SOPRA, 26/68 rue Pierre Joigneaux, 92270 BOISCOLOMBES, FRANCE
C. Pickering
Affiliation:
Royal Signals and Radar Establishment, St Andrews Road, Malvern, Worcs WR14 3PS, U.K
L.C. Hammond
Affiliation:
ARIES/QEI, Concord MA 01742, USA
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Abstract

Analysis of oxide interfaces with semi-conductor substrates, such as crystalline silicon, gallium arsenide, or indium phosphide is critical in processing and electrical performances. Interfaces can be characterized by spectroscopic ellipsometry (SE), which has a wide spectral range (1.3 to 5.3 eV ) allowing an optical penetration depth of 10 nm to a few microns.

A multilayer stack can be characterized in terms of its layer thicknesses and composition. These physical parameters must be calculated through a mathematical model. Linear regression analysis is used to minimize the differences between the measured spectrum and the calculated model. If necessary, an interlayer can be introduced into the model to enhance the fit. This can be complemented by a new method involving calculation of apparent index values which amplifies interface sensivity allowing the thickness to be measured to better than 2 Angstroms. Examples will be given.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 159: Symposium C – Atomic Scale Structure of Interfaces , 1989 , 459
Copyright
Copyright © Materials Research Society 1990

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References

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