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Spectroscopic Ellipsometry Study of rf-Sputtered a-Ge Films

Published online by Cambridge University Press:  21 February 2011

J. R. Blanco ,
R. Messier ,
K. Vedam  and
P. J. McMarr
J. R. Blanco
Affiliation:
On leave of absence from Hughes Aircraft Company, EL Sequndo, CA 09245
R. Messier
Affiliation:
The Pennsylvania State University, Materials Research Laboratory, University Park, PA 16802
K. Vedam
Affiliation:
Also with the Department of Physics, The Pennsylvania State University, University Park, PA 16802
P. J. McMarr
Affiliation:
The Pennsylvania State University, Materials Research Laboratory, University Park, PA 16802
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Abstract

Sputtered amorphous germanium films have been examined by spectroscopic ellipsometry. a technique known to yield the void fraction in the bulk of the film,. (and hence a measure of density, ρcalc) with a high degree of precision, Considering the commonly accepted values of the dielectric function and the directly measured density, ρexpt, of Paul, Connell and Tomkin (1973), as the reference data, we reportf that ρcalc for some a-Ge films can be greater than that of crystalline Ge. Examination of the top surface of the sputter deposited films indicates that the highest densities are achieved under conditions of high energy ion bombardment of the film. This study indicates that a more detailed microscopic model of the structure of a-Ge must be considered.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 38: Symposium F – Plasma Synthesis and Etching of Electronic Materials , 1984 , 301
Copyright
Copyright © Materials Research Society 1985

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References

1. Rakamori, R., Messier, R. and Roy, R., Appl. Phys. Lett. 20, 201 (1972).Google Scholar
2. Messier, R., Krishnaswamy, S.V., Gilbert, L.R. and Swab, P., J. Appl. Phys. 51, 1611 (1980).Google Scholar
3. Donovan, T.M. and Heinemann, K., Phys. Rev. Lett. 27, 1974 (1971).Google Scholar
4. Paul, W., Connell, G.A.N., Temkin, R.J., Adv. Phys. 22, 531 (1973).Google Scholar
5. Temkin, R.J., Paul, W. and Connell, G.A.N., Adv. Phys. 22, 581 (1973).Google Scholar
6. Connell, G.A.N., Temkin, R.J. and Paul, W., Adv. Phys. 22, 643 (1973).Google Scholar
7. Theye, N.L., in Proc. Int. Conf. Amorphoous and Liquid Semiconductors, eds. Stuke, J. and Brenig, W. (Taylor and Francis, London), p. 479 (1974).Google Scholar
8. Aspnes, D.E., Theeten, J.B. and Hottier, F., Phys. REv. B20, No. 8 (1979).Google Scholar
9. Aspnes, D.E. and Studna, A.A., Surf. Sci. 96 (1980).Google Scholar
10. Bauer, R.S. and Galeener, F.L., Solid St. Commun. 10, 1171 (1972).Google Scholar
11. Donovan, T.M., Spicer, W.E., Bennett, J.M. and Ashley, E.J., Phys. REv. B1, No. 2, 397 (1970).Google Scholar
12. Messier, R. and Roy, R., J. Vac. Sci. Technol. 13, 1060 (1976).Google Scholar
13. Aspnes, D.E. and Studna, A.A., Rev. Sci. Instrum. 49, 291 (1978).Google Scholar
14. messier, R., Girn, A.P. and Roy, R.A., J. Vac. Sci. TEchnol. A2, 500 (1984).CrossRefGoogle Scholar
15. Ross, R.C. and Messier, R., J. Appl. 54, 5744 (1978).Google Scholar
16. Kester, D.J. and Messer, R., Appl. Surf. Sci. (in press).Google Scholar
17. Ortenburger, I.B. and Henderson, D., Phys. Rev. Lett. 30, 1047 (1973).CrossRefGoogle Scholar
18. Vora, H. and Moravec, T.J., J. Appl. Phys. 52, 6151 (1981).Google Scholar