Hostname: page-component-5c6d5d7d68-wbk2r Total loading time: 0 Render date: 2024-08-10T11:04:18.985Z Has data issue: false hasContentIssue false
  • English
  • Français

Spin Lifetime Tuning in Zincblende Heterostructures and Tions to Spin Devices

Published online by Cambridge University Press:  15 March 2011

X. Cartoixà ,
D. Z.-Y. Ting  and
Y.-C. Chang
D. Z.-Y. Ting
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA 91109, USA
Y.-C. Chang
Affiliation:
Department of Physics, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
Get access

Abstract

We present analytical expressions for the D'yakonov-Perel' spin relaxation rates under the combined action of bulk and structural inversion asymmetry for [111] zincblende heterostructures when terms up to linear and third order in k are included in the Hamiltonian. We see for [111] heterostructures that, under the right conditions, the lowest-order-in-k component of the spin relaxation tensor can be made to vanish for all spin components at the same time. We study how the inclusion of terms of higher order in k affects these results. We finally discuss a proposal for a resonant spin lifetime transistor (RSLT) using the spin lifetime tuning concepts presented above, where the characteristics of the [111] device give the designer an added degree of freedom on the direction of the injected spins.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 825: Symposium G – Semiconductor Spintronics , 2004 , G6.6
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Esaki, L., Tsu, R., IBM J. Res. Develop. 14, 61 (1970).Google Scholar
[2] Likharev, K. K., Proc. IEEE 87, 606 (1999).And References therein.Google Scholar
[3] Datta, S., Das, B., Appl. Phys. Lett. 56, 665 (1990).Google Scholar
[4] Bychkov, Y. A., Rashba, E. I., J. Phys. C 17, 6039 (1984).Google Scholar
[5] Dresselhaus, G., Phys. Rev. 100, 580 (1955).Google Scholar
[6] D'yakonov, M. I., Perel', V. I., Fiz. Tverd. Tel. 13, 3581 (1971).Google Scholar
[7] D'yakonov, M. I., Kachorovskii, V. Y., Fiz. Tekh. Poluprovodn. 20, 178 (1986). [Sov. Phys. Semicond. 20, 110 (1986)].Google Scholar
[8] Luo, J., Munekata, H., Fang, F. F., Stiles, P. J., Phys. Rev. B 38, 10142 (1988).Google Scholar
[9] Pikus, G. E., Titkov, A. N., Optical Orientation, Meier, F., Zakharchenya, B. P., eds. (North Holland, Amsterdam, Netherlands, 1984), vol. 8, pp. 73–131.Google Scholar
[10] Averkiev, N. S., Golub, L. E., Willander, M., J. Phys.: Condens. Matter 14, R271 (2002).Google Scholar
[11] Schliemann, J., Egues, J. C., Loss, D., Phys. Rev. Lett. 90, 146801 (2003).Google Scholar
[12] Cartoixà, X., Ting, D. Z.-Y., Chang, Y.-C., Appl. Phys. Lett. 83, 1462 (2003).Google Scholar
[13] Averkiev, N. S., Golub, L. E., Phys. Rev. B 60, 15582 (1999).Google Scholar
[14] Kiselev, A. A., Kim, K. W., Phys. Stat. Sol. (b) 221, 491 (2000).Google Scholar
[15] Hall, K. C., Lau, W. H., Gündogdu, K., Flattà, M. E., Boggess, T. F., Appl. Phys. Lett. 83, 2937 (2003).Google Scholar
[16] Eppenga, R., Schuurmans, M. F. H., Phys. Rev. B 37, 10923 (1988).Google Scholar
[17] Cartoixà, X., Ting, D. Z.-Y., Chang, Y.-C., cond-mat/0402237 (2004).Google Scholar
[18] Lau, W. H., Olesberg, J. T., Flattàé, M. E., Phys. Rev. B 64, 161301 (2001).Google Scholar
[19] Schäapers, T., Engels, G., Lange, J., Klocke, T., Hollfelder, M., Lüth, H., J. Appl. Phys. 83, 4324 (1998).Google Scholar
[20] Cartoixà, X., Ting, D. Z.-Y., Daniel, E. S., McGill, T. C., Superlatt. Microstruct. 30, 309 (2001).Google Scholar
[21] Nitta, J., Akazaki, T., Takayanagi, H., Enoki, T., Phys. Rev. Lett. 78, 1335 (1997).Google Scholar
[22] Cardona, M., Christensen, N. E., Fasol, G., Phys. Rev. B 38, 1806 (1988).Google Scholar
[23] Cartoixà, X., Ting, D. Z.-Y., McGill, T. C., cond-mat/0212394 (2002).Google Scholar
[24] Elliott, R. J., Phys. Rev. 96, 266 (1954).Google Scholar
[25] Yafet, Y., Solid State Physics, Seitz, F., Turnbull, D., eds. (Academic Press, New York, 1963), vol. 14, pp. 1–98.Google Scholar
[26] Bir, G. L., Aronov, A. G., Pikus, G. E., Zh. Eksp. Teor. Fiz. 69, 1382 (1975). [Sov. Phys. JETP 42, 705 (1976)].Google Scholar
[27] Ohno, Y., Terauchi, R., Adachi, T., Matsukura, F., Ohno, H., Phys. Rev. Lett. 83, 4196 (1999).Google Scholar
[28] Karimov, O. Z., John, G. H., Harley, R. T., Lau, W. H., Flatte, M. E., Henini, M., Airey, R., Phys. Rev. Lett. 91, 246601 (2003).Google Scholar
[29] Tsang, C., Fontana, R. E., Lin, T., Heim, D. E., Speriosu, V. S., Gurney, B. A., Mason, M. L., IEEE Trans. Magn. 30, 3801 (1994).Google Scholar