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Spontaneous Self-Embedding of Three-Dimensional SiGe Islands

Published online by Cambridge University Press:  10 February 2011

E. Mateeva ,
P. Sutter  and
M. G. Lagally
E. Mateeva
Affiliation:
Colorado School of Mines, Golden, CO 80401, emateeva@mines.edu University of Wisconsin, Madison, MI 53706
P. Sutter
Affiliation:
University of Wisconsin, Madison, MI 53706 Colorado School of Mines, Golden, CO 80401
M. G. Lagally
Affiliation:
University of Wisconsin, Madison, MI 53706
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Abstract

It is shown that. under appropriate conditions, high-Ge-concentration coherent 3D SiGe islands grown on Si(100) self-embed in a matrix of low-Ge-concentration alloy. The process may be more generally useful for preserving the shape of self-assembled “quantum dot” islands during embedding in a matrix material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 571: Symposium W – Semiconductor Quantum Dots , 1999 , 313
Copyright
Copyright © Materials Research Society 2000

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References

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