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Stability in Amorphous Silicon

Published online by Cambridge University Press:  26 February 2011

Z E. Smith  and
S. Wagner
Z E. Smith
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
S. Wagner
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
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Abstract

The experimental phenomena associated with light-induced degradation and thermal recovery of hydrogenated amorphous silicon (a-Si:H) films are reviewed, with special emphasis on the limitations of each experimental technique. When several techniques are used in concert, a fuller picture emerges. Recent experiments suggest different positions in the band-gap of the paramagnetic-associated defect states (the dangling bonds) for doped and undopedfilms; this information can be combined with conductivity, sub-bandgap optical absorption and electron spin resonance data to yield a model for the density of gap states (DOS) in a- Si:H, including how the DOS changes upon illumination and annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 95: Symposium E – Amorphous Silicon Semiconductors--Pure and Hydrogenated , 1987 , 551
Copyright
Copyright © Materials Research Society 1987

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