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The Stability of MoSi2 Films in Vacuum and Oxidizing Atmospheres

Published online by Cambridge University Press:  15 February 2011

L.E. Kolaya ,
D.J. Duquette  and
J.B. Hudson
L.E. Kolaya
Affiliation:
Currently at: Knolls Atomic Power Laboratory, P.O. Box 1072, Schenectady, NY 12301-1072
D.J. Duquette
Affiliation:
Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12180
J.B. Hudson
Affiliation:
Materials Engineering Department, Rensselaer Polytechnic Institute, Troy, NY 12180
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Abstract

The stability of MoSi2, films with respect to mass loss at high temperature has been investigated in vacuum and dry air environments at temperatures up to 1300° C. Samples were sputter deposited films of approximate composition MoSi3, on sapphire substrates. Post heat treatment analysis by X-ray diffraction, scanning electron microscopy, and electron microprobe analysis indicated that the films recrystallized, and that phase separation of the excess silicon from the MoSi2, occurred early in the heating process. With continued heating, silicon was lost from the films by evaporation, leading to the conversion of the films to Mo5Si3. The rate of mass loss was much less in the air environment due to the formation of a SiO2, layer which served as a diffusion barrier to silicon. Evidence of a reaction along the MoSi2,/A12O3 interface was observed visually, but could not be detected chemically.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 357: Symposium C – Structure and Properties of Interfaces in Ceramics , 1994 , 207
Copyright
Copyright © Materials Research Society 1995

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