Hostname: page-component-77c89778f8-gq7q9 Total loading time: 0 Render date: 2024-07-18T12:33:11.307Z Has data issue: false hasContentIssue false
  • English
  • Français

Stabilization of Hydrogen‐Free Cvd‐ Sio2 Films

Published online by Cambridge University Press:  10 February 2011

Y. Uchida ,
S. Takei  and
M. Matsumura
Y. Uchida
Affiliation:
Department of Electronics and Information Science, Teikyo University of Science and Technology, Uenohara‐machi, Kitatsuru‐gun, Yamanashi 409–01, JAPAN, uchida@ntu.ac.jp
S. Takei
Affiliation:
Department of Electronics and Information Science, Teikyo University of Science and Technology, Uenohara‐machi, Kitatsuru‐gun, Yamanashi 409–01, JAPAN, uchida@ntu.ac.jp
M. Matsumura
Affiliation:
Department of Electronics and Information Science, Teikyo University of Science and Technology, Uenohara‐machi, Kitatsuru‐gun, Yamanashi 409–01, JAPAN, uchida@ntu.ac.jp Department of Physical Electronics, Tokyo Institute of Technology, O‐okayama, Meguro‐ku, Tokyo 152, JAPAN
Get access

Abstract

Annealing effects have been investigated for the SiO2 films deposited from a Tetra‐Iso‐Cyanate‐Silane and Tertiary‐Alkyl‐Amine gas mixture in order to stabilize its desirable hydrogen‐free property. It was found that O3 annealing eliminates effectively the NCO‐group from the deposited film, resulting in the improved water resistance characteristics, and that HF changes the Si‐NCO bonds to Si‐F bonds resulting also in improved film properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 446: Amorphous and Crystalline Insulating Thin Films–1996 , 1996 , 21
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Lucovsky, G., Manitini, M. J., Srivastava, J. K. and Irene, E. A. : J. Vac. Sci. Technol., B5, p. 530 (1987).Google Scholar
2 Tobin, P. J., Price, J. B. and Cambell, L. M., J. Electrochem. Soc., 127, p. 2222 (1980).Google Scholar
3 Uchida, Y., Takei, S. and Matsumura, M.: Extended Abstract of SSDM 96, p.856 (1996).Google Scholar
4 Uchida, Y., Takei, S. and Matsumura, M. : To be published in March issue of Jpn. J. Appl. Phys., 36, (1997).Google Scholar
5 Uchida, Y., Taguchi, K., Takei, S. and Matsumura, M. : Int'l. workshop on AM‐LCD, TFTp2–6, (1996).Google Scholar
6 Homma, T., Murao, Y. and Yamaguchi, R. : J. Electrochem. Soc, 140, p.3599 (1993).Google Scholar
7 Yeh, C.F. and Chen, C.L. : J. Electrochem. Soc, 142, p.3579 (1995).Google Scholar