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Status of β-SiC, Diamond and C-BN Semiconductors; Comparison of a Si Power Fet to a Hypothetical Diamond Fet

Published online by Cambridge University Press:  26 February 2011

Richard Koba  and
William Russell
Richard Koba
Affiliation:
Diamond Materials, Inc., 2820 E. College Ave., State College, PA 16801
William Russell
Affiliation:
Diamond Materials, Inc., 2820 E. College Ave., State College, PA 16801
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Abstract

Monocrystalline β-SiC, diamond and cubic boron nitride (c-BN) are the three ultimate semiconductors. These materials show great promise as active semiconductors for power electronics because of their wide bandgap, the existence of substitutional dopants, their high dielectric strength, their low dielectric constant, and their high thermal conductivity. To illustrate their superiority, a conventional Si.power FET is compared to a theoretical diamond FET. By assuming the diamond FET can operate hotter and at a higher voltage, it is calculated that the diamond FET should deliver up to 35 times more power-to-load than the Si FET.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 43
Copyright
Copyright © Materials Research Society 1990

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