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Step-Driven Surface Segregation and Ordering During Si-Ge MBE Growth

Published online by Cambridge University Press:  25 February 2011

D. E. Jesson ,
S. J. Pennycook ,
J.-M. Baribeau  and
D. C. Houghton
D. E. Jesson
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
S. J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
J.-M. Baribeau
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, KIAOR6, Canada
D. C. Houghton
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, KIAOR6, Canada
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Abstract

An important role of type SB step edges in determining the as-grown microstructure of Si-Ge superlattices and alloys is implicated from direct Z-contrast images of as-grown structures. A variety of different ordered phase variants can arise at each Si on Ge interface as a result of vertical segregation during superlattice growth. A new monoclinic-ordered structure is predicted to arise as a result of lateral segregation during alloy growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 263: Symposium F – Mechanisms of Heteroepitaxial Growth , 1992 , 9
Copyright
Copyright © Materials Research Society 1992

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References

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