Hostname: page-component-77c89778f8-vpsfw Total loading time: 0 Render date: 2024-07-19T13:24:18.183Z Has data issue: false hasContentIssue false
  • English
  • Français

The Stepwise Cross-sectional Crystalline Analysis of the Stress Induced Voiding in Cu Interconnect

Published online by Cambridge University Press:  01 February 2011

Hyo-Jong Lee ,
Heung Nam Han ,
Suk Hoon Kang ,
Jeong-Yun Sun  and
Kyu Hwan Oh
Hyo-Jong Lee
Affiliation:
ocma97@hanmail.net, Seoul National University, School of Materials Science and Engineering, San 56-1, Shinrim-dong, Kwanak-gu, Seoul, 151-744, Korea, Republic of, 82-2-880-8306, 82-2-885-9671
Heung Nam Han
Affiliation:
hnhan@snu.ac.kr, Seoul National University, School of Materials Science and Engineering, San 56-1, Shinrim-dong, Kwanak-gu, Seoul, 151-744, Korea, Republic of
Suk Hoon Kang
Affiliation:
sangle77@snu.ac.kr, Seoul National University, School of Materials Science and Engineering, San 56-1, Shinrim-dong, Kwanak-gu, Seoul, 151-744, Korea, Republic of
Jeong-Yun Sun
Affiliation:
scrollin@snu.ac.kr, Seoul National University, School of Materials Science and Engineering, San 56-1, Shinrim-dong, Kwanak-gu, Seoul, 151-744, Korea, Republic of
Kyu Hwan Oh
Affiliation:
Kyuhwan@snu.ac.kr, Seoul National University, School of Materials Science and Engineering, San 56-1, Shinrim-dong, Kwanak-gu, Seoul, 151-744, Korea, Republic of
Get access

Abstract

In a crystallographic study of stress induced voiding of copper interconnect, the planar electron backscattered diffraction analysis showed that the void was initiated at the triple junction of the grain boundaries, not at the junction of the twin boundary and grain boundary. By using stepwise cross-sectional crystalline investigation for the void, it was possible to rebuild 3D crystalline structure near the void. From the stress calculation based on the measured crystalline structures, the hydrostatic stress was highly concentrated at the triple junction of the twin boundary and grain boundary, but experimentally, there was no voiding at that. The voiding in the copper interconnect may depend mainly on the boundary instability.

Keywords

crystallographic structurethermal stressesgrain boundaries
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 914: Symposium F – Materials, Technology and Reliability of Low-k Dielectrics and Copper Interconnects , 2006 , 0914-F07-04
Copyright
Copyright © Materials Research Society 2006

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Ogawa, E.T., McPherson, J.W., Rosal, J.A., Dickerson, K. J., Chiu, T. –C., Tsung, L. Y., Jain, M. K., Bonifield, T. D., Ondrusek, J. C., and McKee, W. R., Proceedings of the 40th Annual International Reliability Physics Symposium, 2002, p. 312.Google Scholar
2 Lee, Sun-Jung, Lee, Soo-Geun, Suh, Bong-Suk, Shin, Hongjae, Lee, Nae- In, Kang, Ho-Kyu and Suh, Gwangpyuk, Proceedings of IEEE International Interconnect Technology Conference, 2005, p. 108.Google Scholar
3 Heino, P., Peronodi, L., Kaski, K. and Ristolainen, E., Phys. Rev. B 60, 14625 (1999).Google Scholar
4 Wolf, D., Acta metall. 37, 1983 (1989).Google Scholar
5 Randle, V. and Engler, O., Introduction to Texture Analysis Macrotexture, Microtexture and Orientation Mapping (Gordon and Breach Science Publishers, The Netherlands, 2000), pp. 224–236.Google Scholar
6 Lee, Hyo-Jong, Kim, Dong Ik, Ahn, Jeong Hun and Lee, Dong Nyung, Thin Solid Films 474, 250 (2005).Google Scholar