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Strain Induced Stoppage of the Emission Peak Blueshift of Annealed Bilayer Quantum Dot Structures Separated by Thin Spacer

Published online by Cambridge University Press:  31 January 2011

Saumya Sengupta ,
Nilanjan Halder  and
Subhananda Chakrabarti
Saumya Sengupta
Affiliation:
saumya@ee.iitb.ac.in, Indian Institute of Technology Bombay, electrical engineering, Mumbai, Maharashtra, India
Nilanjan Halder
Affiliation:
nilanjanh@gmail.com, Indian Institute of Technology Bombay, electrical engineering, Mumbai, Maharashtra, India
Subhananda Chakrabarti
Affiliation:
subho@ee.iitb.ac.in, Indian Institute of Technology Bombay, electrical engineering, Powai, Mumbai, Maharashtra, 400076, India
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Abstract

We have investigated the effect of post-growth rapid thermal annealing (RTA) at different temperature on two InAs/GaAs bilayer quantum dots samples with different spacer thicknesses (7.5nm and 8.5nm). It is found that when RTA temperature gradually increases, there is usual blue shift of ground state emission peak wavelength for the sample having thinner spacer but for the other sample the emission peak sustains at same peak wavelength position upto a higher annealing temperature. The dots inside the sample with less spacer thickness dissolute much earlier (beyond 700°C annealing temperature) in comparison to the other sample. The structural and optical characterization has been done by cross sectional transmission electron microscope (XTEM) and low temperature photoluminescence (PL) experiments respectively.

Keywords

molecular beam epitaxy (MBE)III-Vannealing
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1195: Symposium B – Rellliability and Materials Issues of Semiconductor Optical and Electrical Devices and Materials , 2009 , 1195-B15-01
Copyright
Copyright © Materials Research Society 2010

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