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Strain mapping on gold thin film buckling and silicon blistering

Published online by Cambridge University Press:  01 February 2011

P. Goudeau
Affiliation:
Laboratoire de Métallurgie Physique, UMR 6630 CNRS, Université de Poitiers, SP2MI, Téléport2, Bd M. et P. Curie, BP 30179, F-86962 Futuroscope Chasseneuil cedex
N. Tamura
Affiliation:
Advanced Light Source, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, MS 2-400, Berkeley, CA, 94270, USA
G. Parry
Affiliation:
Laboratoire de Métallurgie Physique, UMR 6630 CNRS, Université de Poitiers, SP2MI, Téléport2, Bd M. et P. Curie, BP 30179, F-86962 Futuroscope Chasseneuil cedex
J. Colin
Affiliation:
Laboratoire de Métallurgie Physique, UMR 6630 CNRS, Université de Poitiers, SP2MI, Téléport2, Bd M. et P. Curie, BP 30179, F-86962 Futuroscope Chasseneuil cedex
C. Coupeau
Affiliation:
Laboratoire de Métallurgie Physique, UMR 6630 CNRS, Université de Poitiers, SP2MI, Téléport2, Bd M. et P. Curie, BP 30179, F-86962 Futuroscope Chasseneuil cedex
F. Cleymand
Affiliation:
Laboratoire de Science et Génie des Surface, Ecole des Mines de Nancy, UMR CNRS 7570, Parc Saurupt, F-54042, Nancy
H. Padmore
Affiliation:
Advanced Light Source, Lawrence Berkeley National Laboratory, 1 Cyclotron Road, MS 2-400, Berkeley, CA, 94270, USA
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Abstract

Stress/Strain fields associated with thin film buckling induced by compressive stresses or blistering due to the presence of gas bubbles underneath single crystal surfaces are difficult to measure owing to the microscale dimensions of these structures. In this work, we show that micro Scanning X-ray diffraction is a well suited technique for mapping the strain/stress tensor of these damaged structures.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

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