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Strain Relief Mechanisms in The Growth of GexSi1−x/Si(110) Heterostructures
Published online by Cambridge University Press: 25 February 2011
Abstract
We describe a detailed quantitative theoretical and experimental analysis of strain relief mechanisms in GexSi1−x/Si(110). For this interface, both partial and total glide dislocations may effect strain relief. Detailed comparison between experimental measurement and theoretical prediction of the regimes in which the two types of dislocations are observed allows a very accurate determination of the stacking fault energy in GexSi1−x alloys.
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- Copyright © Materials Research Society 1992
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