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Strain-Field Induced Crosshatch Formation During Molecular Beam Epitaxy of InGaAs/GaAs Films

Published online by Cambridge University Press:  15 February 2011

X. C. Zhou
Affiliation:
NanoFAB Center, Engineering/Physics Building, Texas A&M University College Station, TX 77843-4242, USA Laboratory for Surface Physics, Chinese Academy of Sciences P.O. Box 603-8, Beijing 100080, P.R. China
J. Jiang
Affiliation:
Laboratory for Surface Physics, Chinese Academy of Sciences P.O. Box 603-8, Beijing 100080, P.R. China Beijing Laboratory of Electron Microscopy, Chinese Academy of Sciences P.O. Box 2724, Beijing 100080, P.R. China
A. Y. Du
Affiliation:
Beijing Laboratory of Electron Microscopy, Chinese Academy of Sciences P.O. Box 2724, Beijing 100080, P.R. China
J. W. Zhao
Affiliation:
Laboratory for Surface Physics, Chinese Academy of Sciences P.O. Box 603-8, Beijing 100080, P.R. China Beijing Laboratory of Electron Microscopy, Chinese Academy of Sciences P.O. Box 2724, Beijing 100080, P.R. China
S. M. Mu
Affiliation:
Laboratory for Surface Physics, Chinese Academy of Sciences P.O. Box 603-8, Beijing 100080, P.R. China
L.-M. Peng
Affiliation:
Beijing Laboratory of Electron Microscopy, Chinese Academy of Sciences P.O. Box 2724, Beijing 100080, P.R. China
Z. T. Zhong
Affiliation:
Laboratory for Surface Physics, Chinese Academy of Sciences P.O. Box 603-8, Beijing 100080, P.R. China
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Abstract

Using reflection electron microscopy (REM), transmission electron microscopy (TEM), and Nomarski optical microscopy we obtained direct evidence that local surface strain-fields, originated from misfit dislocations, are responsible for the formation of morphological crosshatches during molecular beam epitaxy of lattice mismatched InGaAs/GaAs layers. A mechanism is proposed to correlate the formation of the crosshatched patterns with the variation of the growth rate across the epitaxial surface under the perturbation of network shaped strain-fields in the surface.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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