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Stress in Spin Valve Multilayers During Antiferromagnetic Phase Transformation

Published online by Cambridge University Press:  10 February 2011

B. J. Daniels
Affiliation:
Seagate Recording Heads, 7801 Computer Avenue South, Minneapolis, MN 55435-5489
S. P. Bozeman
Affiliation:
Seagate Recording Heads, 7801 Computer Avenue South, Minneapolis, MN 55435-5489
H HA
Affiliation:
Seagate Recording Heads, 7801 Computer Avenue South, Minneapolis, MN 55435-5489
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Abstract

The stresses in sputter-deposited, NiMn- and PtMn-pinned top spin valve multilayers were measured using a laser-based wafer curvature technique. As-deposited stresses were 150 to 180 MPa in compression for NiMn- and 970 to 1020 MPa in compression for PtMn-pinned spin valves. Following deposition and stress measurement, these films were annealed in an applied magnetic field of 250 Oe for 2 hours at 300°C. This anneal causes the antiferromagnetic layer to undergo a phase transformation from the face-centered cubic (fcc) to the face-centered tetragonal (fct) crystal structure. This phase transformation increases the average stresses in the spin valves to 740–800 MPa in tension for the NiMn-pinned spin valves and to 475–580 MPa for the PtMnpinned spin valves. Stress changes during the antiferromagnetic phase transformation were also observed as a function of annealing temperature and time during substrate heating, annealing, and cooling. The stress varied nearly linearly with temperature during the heating and cooling of the substrate, indicating that the bulk of the phase transformation occurs during the isothermal portion of the anneal. By monitoring stress vs time during the isothermal anneal, the progression of the antiferromagnetic phase transformation was observed. Final stress data obtained from the wafers annealed in the wafer curvature system (no applied magnetic field) are within 10% of those obtained using the magnetic annealing process.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

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