Hostname: page-component-84b7d79bbc-5lx2p Total loading time: 0 Render date: 2024-07-30T12:29:59.908Z Has data issue: false hasContentIssue false

Stress Stability of Poly-SiGe and Various Oxide Films in Humid Environments

Published online by Cambridge University Press:  01 February 2011

Carrie W. Low
Affiliation:
Departments of Electrical Engineering and Computer Sciences, University of California at Berkeley, 497. Cory Hall, Berkeley, CA 94720–1774, USA
Brian L. Bircumshaw
Affiliation:
Mechanical Engineering, University of California at Berkeley, 497. Cory Hall, Berkeley, CA 94720–1774, USA
Tatiana Dorofeeva
Affiliation:
Departments of Electrical Engineering and Computer Sciences, University of California at Berkeley, 497. Cory Hall, Berkeley, CA 94720–1774, USA
Gelila Solomon
Affiliation:
Departments of Electrical Engineering and Computer Sciences, University of California at Berkeley, 497. Cory Hall, Berkeley, CA 94720–1774, USA
Tsu-Jae King
Affiliation:
Departments of Electrical Engineering and Computer Sciences, University of California at Berkeley, 497. Cory Hall, Berkeley, CA 94720–1774, USA
Roger T. Howe
Affiliation:
Departments of Electrical Engineering and Computer Sciences, University of California at Berkeley, 497. Cory Hall, Berkeley, CA 94720–1774, USA Mechanical Engineering, University of California at Berkeley, 497. Cory Hall, Berkeley, CA 94720–1774, USA
Get access

Abstract

This paper presents the stress stability of thin films for MEMS structural and sacrificial layers. The average residual stresses of the thin films were monitored via wafer curvature measurement over a long period of time. Poly-Si, poly-SiGe, poly-Ge and thermally growth SiO2 films are found to be stable in humid environments. Moisture makes LPCVD and TEOS-based PECVD SiO2 films more compressive over time. Multi-layer thin film stress is modeled with the same methodology used to derive the Stoney Equation [1].

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Stoney, G., Proc. Roy. Soc London, A82, 172 (1909)Google Scholar
2. Franke, A. E., et al, J. MEMS., 12, p. 160171 (2003)Google Scholar
3. Bircumshaw, B. L., et al., MEMS 2004, p. 514520, Maastricht, The Netherlands (2004)Google Scholar
4. Madou, M., Fund. of Microfab., 2nd ed, CRC Press, p. 302 (2002)Google Scholar
5. Kwok, K., et al, J. Electrochem. Soc., 141, p. 21722177 (1994)Google Scholar
6. Senturia, S. D., Microsystem Design, Kluwer Academic Publishers, p. 201238 (2001)Google Scholar