Hostname: page-component-77c89778f8-fv566 Total loading time: 0 Render date: 2024-07-23T05:16:35.319Z Has data issue: false hasContentIssue false
  • English
  • Français

Stress-induced Void Formation in Passivated Cu Films

Published online by Cambridge University Press:  01 February 2011

Dongwen Gan ,
Bin Li  and
Paul S. Ho
Dongwen Gan
Affiliation:
Laboratory for Interconnect and Packaging, The University of Texas at Austin, Austin, TX 78712-1063, U.S.A
Bin Li
Affiliation:
Laboratory for Interconnect and Packaging, The University of Texas at Austin, Austin, TX 78712-1063, U.S.A
Paul S. Ho
Affiliation:
Laboratory for Interconnect and Packaging, The University of Texas at Austin, Austin, TX 78712-1063, U.S.A
Get access

Abstract

In this paper, we investigated void formation in passivated Cu films focusing on the kinetics of void formation under isothermal annealing as a function of temperature. Interestingly, we found that the kinetics of void formation in Cu films is consistent with that observed in Cu lines, which is driven by the combined effect of thermal stress and mass transport resulting in a peak growth rate at about 250°C. To analyze the observed results, we have calculated the stress state at the <111>/<200> Cu grain boundary to demonstrate the existence of a localized triaxial stress state as a result of elastic anisotropy. To account for void density, x-ray analysis was performed to measure the grain texture using inverse pole figure plot and the result can account for the void density observed. A kinetic model was used to analyze void growth under isothermal annealing. A threshold stress of about 40MPa was deduced for void growth in passivated Cu films with an activation energy of 0.75 eV.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 863: Symposium B – Materials, Technology and Reliability of Advanced Interconnects , 2005 , B7.8/O11.8
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Korhonen, M.A., Borgesen, P., and Li, Che-Yu, MRS Bulletin/July 1992, P61–68.Google Scholar
2. Nucci, J.A., Shacham-Diamand, Y., and Sanchez, J.E. Jr, Appl. Phys. Lett. 65, 3585 (1995).Google Scholar
3. Oshima, T., Tamaaru, T., Ohmori, K., Aoki, H., Ashihara, H., Saito, T., Yamaguchi, H., Miyauchi, M., Torii, K., Muarata, J., Satoh, A., Miyazaki, H. and Hinode, K., IEDM, 123 (2000).Google Scholar
4. Ogawa, E.T., McPherson, J.W., Rosal, J.A., Dickerson, K.J., Chiu, T.C.et al, International reliability physics symposium, Piscataway, NJ, P312–321 (2002).Google Scholar
5. Shaw, T.M., Gignac, L., Liu, X.H., and Rosenberg, R.R., Sixth International Workshop on Stressinduced Phenomena in Metallization. Ithaca, NY, USA, 25-27 July 2001.Google Scholar
6. Zhao, J.H., Ryan, T., Ho, P.S.et al, J. Appl. Phys. Sept. 88(5), 3029–38 (2000).Google Scholar
7. McPherson, J.W. and Dunn, C.F., J. Vac. Sci.& Tech, B5(5), 1321–25(1987).Google Scholar
8. Hertzberg, R.W., Deformation and fracture mechanics of engineering materials; John Wiley and Sons, 1989.Google Scholar
9. Kasthurirangan, J., Ph. D thesis, The Univ. of Texas at Austin, 1998.Google Scholar
10. Huang, R., Gan, D.W., Ho, P.S., J. Appl. Phys. (accepted for publishing, May 2005)Google Scholar