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Structural and Compositional Study of Sil-xGex Multilayer Structures Using Medium Energy Ion Scattering

Published online by Cambridge University Press:  15 February 2011

P.K. Hucknall ,
S. Sugden ,
C.J. Sofield ,
T.C.Q Noakes  and
C.F. Mcconville
P.K. Hucknall
Affiliation:
AEA Technology, 477 Harwell, Didcot, Oxfordshire, OX11 ORA., UK
S. Sugden
Affiliation:
AEA Technology, 477 Harwell, Didcot, Oxfordshire, OX11 ORA., UK
C.J. Sofield
Affiliation:
AEA Technology, 477 Harwell, Didcot, Oxfordshire, OX11 ORA., UK
T.C.Q Noakes
Affiliation:
Department of Physics, University of Warwick, Coventry, CV4 7AL., UK
C.F. Mcconville
Affiliation:
Department of Physics, University of Warwick, Coventry, CV4 7AL., UK
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Abstract

The ability to determine structural and compositional information from the sub-surface region of a semiconductor material has been demonstrated using a new time-of-flight medium energy ion scattering spectroscopy (ToF-MEISS) system. A series of silicon-silicon/germanium (Si/Sil-xGex) hetero-structure and multilayer samples, grown using both solid source molecular beam epitaxy (MBE) and gas source chemical vapour deposition (CVD) on Si(100) substrates, have been investigated. These data indicate that each individual layer of Sil-xGex can be uniquely identified with a depth resolution of approximately 3 nm. A comparison of MBE and CVD grown samples has also been made using layers with similar structures and composition and the results compared with conventional Rutherford back-scattering spectrometry (RBS).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 379: Symposium C – Strained Layer Epitaxy–Materials, Processing, and Devise Applications , 1995 , 229
Copyright
Copyright © Materials Research Society 1995

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References

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