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Structural and Electrical Characterization of Polycrystalline Semiconductor Materials

Published online by Cambridge University Press:  28 February 2011

Richard J. Matson  and
Y. Simon Tsuo
Richard J. Matson
Affiliation:
Solar Energy Research InstituteGolden, Colorado 80401, USA
Y. Simon Tsuo
Affiliation:
Solar Energy Research InstituteGolden, Colorado 80401, USA
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Abstract

Secondary electron imaging, electron channeling and electron-beaminduced current (EBIC) are used alternately in a scanning electron microscope to characterize and correlate the morphology, crystallographic orientation, and electronic quality (types and spatial distribution of defects) of individual grains in polycrystalline semiconductor samples. The technique is discussed in some detail, and a number of applications and results in the study of edge-supported-pulling (ESP) silicon sheet and low-angle silicon sheet (LASS) materials are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 567
Copyright
Copyright © Materials Research Society 1985

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