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Structural and Optical Properties of Thin Metal-Oxide Films (ZnO and SnOx) Deposited on Glass and Silicon Substrates

Published online by Cambridge University Press:  01 February 2011

Serekbol Zh. Tokmoldin ,
Bulat N. Mukashev ,
Nurzhan B. Beisenkhanov ,
Azamat B. Aimagambetov  and
Irina V. Ovcharenko
Serekbol Zh. Tokmoldin
Affiliation:
Institute of Physics and Technology, Almaty, 050032, Kazakstan
Bulat N. Mukashev
Affiliation:
Institute of Physics and Technology, Almaty, 050032, Kazakstan
Nurzhan B. Beisenkhanov
Affiliation:
Institute of Physics and Technology, Almaty, 050032, Kazakstan
Azamat B. Aimagambetov
Affiliation:
Institute of Physics and Technology, Almaty, 050032, Kazakstan
Irina V. Ovcharenko
Affiliation:
Institute of Physics and Technology, Almaty, 050032, Kazakstan
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Abstract

Thin ZnO films deposited on silicon and glass substrates by DC reactive magnetron sputtering were exposed to a sequence of thermal treatments at 400°C in vacuum, then in air, then in vacuum again. Photoluminescence studies of these ZnO films exited at 325 nm by He-Cd laser revealed an appearance of a photoluminescence band around 380 nm upon the annealing in vacuum.

Thin SnOx films were deposited on glass substrates by ion-beam sputtering using pure oxygen as a working gas. X-ray diffraction analysis showed that as-deposited films consist of textured SnO2- and Sn2O3-crystallites which are transformed into polycrystalline SnO2 phase at a moderate temperature near 200°C. It is shown that the growth of the SnO2 crystallite size upon the annealing is mainly due to the disappearance of an amorphous phase at 400°C and coalescence of crystallites at 600°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E4.10
Copyright
Copyright © Materials Research Society 2005

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