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Structural and Spectroscopic Study of Manganese Silicide Islands on Silicon

Published online by Cambridge University Press:  17 March 2011

Miyoko Tanaka ,
Qi Zhang ,
Masaki Takeguchi  and
Kazuo Furuya
Miyoko Tanaka
Affiliation:
National Institute for Materials Science, Sakura, Tsukuba 305-0003, JAPAN
Qi Zhang
Affiliation:
National Institute for Materials Science, Sakura, Tsukuba 305-0003, JAPAN
Masaki Takeguchi
Affiliation:
National Institute for Materials Science, Sakura, Tsukuba 305-0003, JAPAN
Kazuo Furuya
Affiliation:
National Institute for Materials Science, Sakura, Tsukuba 305-0003, JAPAN
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Abstract

The Mn deposited clean Si (111) substrates were examined with UHV-TEM and STM that are part of an UHV-TEM/STM integrated characterization system. The Mn deposition with coverages of 5-20 ML followed by annealing at 673 K formed MnSi islands with Moire fringes. They showed metallic character. Subsequent annealing at 873 K dissipated the islands instead of transforming them into MnSi1.7. The re-deposition of Mn and re-annealing at 473 K succeeded to transform MnSi islands into MnSi1.7. The islands had several orientation relationships with substrate Si, and were semiconducting. The growth mechanism of MnSi1.7 is inferred.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 704: Symposium W – Nanoparticulate Materials , 2001 , W9.8.1
Copyright
Copyright © Materials Research Society 2002

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