Article contents
Structural Characterization of Ion Beam Synthesized Epitaxial ErSi2-x Layers
Published online by Cambridge University Press: 15 February 2011
Abstract
The results are discussed of the characterization by means of TEM, RBS and XRD of ErSi2-x layers prepared by ion beam synthesis on (111) silicon. It will be shown that high quality (buried) layers can be prepared by channelled implantation of the erbium, whereas unchannelled implantation leads to discontinuous polycrystalline surface layers. The epitaxial growth and vacancy ordering in the silicide are discussed.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1996
References
- 5
- Cited by