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Structural Characterization of Laser-Annealed Sputtered Poly-Si Films for High Mobility Tfts

Published online by Cambridge University Press:  25 February 2011

Akio Okamoto ,
Seiiti Shirai ,
Shiro Suyama  and
Tadashi Serikawa
Akio Okamoto
Affiliation:
NTT Applied Electronics Laboratories 3-9-11, Midori-cho, Musashino-shi, Tokyo 180, Japan
Seiiti Shirai
Affiliation:
NTT Applied Electronics Laboratories 3-9-11, Midori-cho, Musashino-shi, Tokyo 180, Japan
Shiro Suyama
Affiliation:
NTT Applied Electronics Laboratories 3-9-11, Midori-cho, Musashino-shi, Tokyo 180, Japan
Tadashi Serikawa
Affiliation:
NTT Applied Electronics Laboratories 3-9-11, Midori-cho, Musashino-shi, Tokyo 180, Japan
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Abstract

A high mobility of 390 cm2/Vs was successfully obtained for sputtered films, compared with 100 cm2/Vs for CVD films. Then, structural characterization of laser-annealed sputtered silicon films were performed, and compared with that of CVD films. TEM observations show a structural difference between the two film types. In sputtered films, many fine grain-like regions which have slightly different crystal orientation from surrounding regions are observed. On the other hand, in the CVD films, defects are widely spread over the film. X-ray diffraction, Raman scattering, and SIMS yield almost the same results in both films. The above-mentioned structural difference is thought to be essential to obtain high mobility.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 223
Copyright
Copyright © Materials Research Society 1991

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References

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