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Structural Characterization of Semiconductor Heterostructures by Atomic Resolution Z-Contrast Imaging at 300Kv

Published online by Cambridge University Press:  21 February 2011

A. J. McGibbon ,
S. J. Pennycook  and
Z. Wasilewski
A. J. McGibbon
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6031, USA
S. J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6031, USA
Z. Wasilewski
Affiliation:
Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, Ontario K1A 0R6, Canada
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Abstract

By applying the technique of Z-contrast imaging to the study of a GaAs/AlGaAs multilayer using a newly developed 300kV scanning transmission electron microscope, we show that it is possible to directly observe the interlocking group III and group V sub-lattices on a column-by-column level. In addition to the direct observation of structural polarity in the [110] orientation, we show that, by using a maximum entropy approach to image processing, the experimentally acquired data can provide direct information on interface structures at atomic resolution.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 299
Copyright
Copyright © Materials Research Society 1994

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