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Structural Defects in Heteroepitaxial and Homoepitaxial GaN

Published online by Cambridge University Press:  21 February 2011

Zuzanna Liliental-Weber ,
S. Ruvimov ,
CH. Kisielowski ,
Y. Chen ,
W. Swider ,
J. Washburn ,
N. Newman ,
A. Gassmann ,
X. Liu  and
L. Schloss
...Show all authors
Zuzanna Liliental-Weber
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
S. Ruvimov
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
CH. Kisielowski
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
Y. Chen
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
J. Washburn
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
N. Newman
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
A. Gassmann
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
X. Liu
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
L. Schloss
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
E.R. Weber
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720
I. Grzegory
Affiliation:
High Pressure Research Center "Unipress" Polish Academy of Sciences, Warsaw, Poland
M. Bockowski
Affiliation:
High Pressure Research Center "Unipress" Polish Academy of Sciences, Warsaw, Poland
J. Jun
Affiliation:
High Pressure Research Center "Unipress" Polish Academy of Sciences, Warsaw, Poland
T. Suski
Affiliation:
High Pressure Research Center "Unipress" Polish Academy of Sciences, Warsaw, Poland
K. Pakula
Affiliation:
High Pressure Research Center "Unipress" Polish Academy of Sciences, Warsaw, Poland
J. Baranowski
Affiliation:
High Pressure Research Center "Unipress" Polish Academy of Sciences, Warsaw, Poland
S. Porowski
Affiliation:
High Pressure Research Center "Unipress" Polish Academy of Sciences, Warsaw, Poland
H. Amano
Affiliation:
Meijo University, Nagoya, Japan
I. Akasaki
Affiliation:
Meijo University, Nagoya, Japan
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Abstract

The microstructure and characteristic defects of heteroepitaxial GaN films grown on sapphire using molecular beam epitaxy (MBE) and metal-organic-chemical-vapor-deposition (MOCVD) methods and of homoepitaxial GaN grown on bulk substrates are described based on transmission electron microscopy (TEM), x-ray diffraction, and cathodoluminescence (CL) studies. The difference in arrangement of dislocations along grain boundaries and die influence of buffer layers on the quality of epitaxial films is described. The structural quality of GaN epilayers is compared to diat of bulk GaN crystals grown from dilute solution of atomic nitrogen in liquid gallium. The full width at half maximum (FWHM) of the x-ray rocking curves for these crystals was in the range of 20–30 arc sec, whereas for the heteroepitaxially grown GaN the FWHM was in the range of 5–20 arc min. Homoepitaxial MBE grown films had FWHMs of about 40 arc sec. The best film quality was obtained for homoepitaxial films grown using MOCVD; these samples were almost free from extended defects. For the bulk GaN crystals a substantial difference in crystal perfection was observed for the opposite sides of the plates shaped normal to the c direction. On one side the surface was almost atomically flat, and the underlying material was free of any extended structural defects, while the other side was rough, with a high density of planar defects. This difference was related to the polarity of the crystal. A large difference in crystal stoichiometry was also observed within different sublayers of the crystals. Based on convergent beam electron diffraction and cathodoluminescence, it is proposed that GaN antisite defects are related to the yellow luminescence observed in these crystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 351
Copyright
Copyright © Materials Research Society 1996

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References

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