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Structural Phase Transition in Buried CoSi2 Layers
Published online by Cambridge University Press: 25 February 2011
Abstract
Heteroepitaxial Si/CoSi2/Si<111> structures were made by high dose implantation of Co in a Si wafer. These single crystaline layers were investigated with 57Co source Mössbauer spectroscopy, 4He ion channeling and X-ray scattering. All results show there is a structural phase transition in the buried CoSi2 layer at a temperature around 200 K.
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- Copyright © Materials Research Society 1993