Hostname: page-component-5c6d5d7d68-tdptf Total loading time: 0 Render date: 2024-08-21T14:18:24.937Z Has data issue: false hasContentIssue false

Structural Properties of Ag-Based Chalcopyrite Compound Thin Films for Solar Cells

Published online by Cambridge University Press:  01 February 2011

Hiroki Ishizaki
Affiliation:
Department of Electrical Engineering and Electronics, Aoyama Gakuin University, 5-10-1, Fuchinobe, Sagamihara, Kanagawa, 299-8558, Japan
Keiichiro Yamada
Affiliation:
Department of Electrical Engineering and Electronics, Aoyama Gakuin University, 5-10-1, Fuchinobe, Sagamihara, Kanagawa, 299-8558, Japan
Ryouta Arai
Affiliation:
Department of Electrical Engineering and Electronics, Aoyama Gakuin University, 5-10-1, Fuchinobe, Sagamihara, Kanagawa, 299-8558, Japan
Yasuyuki Kuromiya
Affiliation:
Department of Electrical Engineering and Electronics, Aoyama Gakuin University, 5-10-1, Fuchinobe, Sagamihara, Kanagawa, 299-8558, Japan
Yukari Masatsugu
Affiliation:
Department of Electrical Engineering and Electronics, Aoyama Gakuin University, 5-10-1, Fuchinobe, Sagamihara, Kanagawa, 299-8558, Japan
Naoomi Yamada
Affiliation:
Department of Electrical Engineering and Electronics, Aoyama Gakuin University, 5-10-1, Fuchinobe, Sagamihara, Kanagawa, 299-8558, Japan
Tokio Nakada
Affiliation:
Department of Electrical Engineering and Electronics, Aoyama Gakuin University, 5-10-1, Fuchinobe, Sagamihara, Kanagawa, 299-8558, Japan
Get access

Abstract

AgGa5Se8 and Ag(In1-xGax)Se2 thin films with different Ag/Ga atomic ratios have been deposited on the corning 1737 glass substrates by molecular beam epitaxy (MBE) system. This crystallographic property of AgGa5Se8 thin films has been investigated by x-ray diffraction and rietveld analysis. These films had the tetragonal structure with the space group of P-42m, regardless of Ag/Ga atomic ratio. The lattice parameters and the optical band gap energy decreased with an increase in the Ag/Ga atomic ratio. Thus, the structural and optical properties of these AgGa5Se8 thin films were controlled by the Ag/Ga atomic ratio.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Nakada, T. and Mizutani, M., Jpn. J. Appl. Phys., 41, 165 (2002)Google Scholar
2 Murthy, Y. S., Hussain, O. M., Naidu, B. S. and Reddy, P J., Material Letters, 8, 504 (1991)Google Scholar
3 Yamada, K., Hyoshino, N. and Nakada, T., Tech. Dig. 14th Photovolt. Sci. Eng. Conf., 2, (2004) 571572 Google Scholar
4 Hahn, S. R. and Kim, W. T., Phys. Rev., B, 27, 5129 (1983)Google Scholar
5 Izumi, F. and Ikeda, T., Mater. Sci. Forum, 198, 321 (2000)Google Scholar
6 Bernard, J. E. and Zunger, A., Phys. Rev., B, 37, 6835 (1988)Google Scholar
7 Negami, T., Kohara, N., Nishitani, M. and Wada, T., Jpn. J. Appl. Phys., 33, 1251 (1994)Google Scholar