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Structural Studies Of Epitaxial CdF2 Layers on Si(111)

Published online by Cambridge University Press:  10 February 2011

A. Yu. Khilko ,
R. N. Kyutt ,
G. N. Mosina ,
N. S. Sokolov ,
Yu. V. Shusterman  and
L. J. Schowalter
A. Yu. Khilko
Affiliation:
Ioffe Physico-Technical Institute, Russian Academy of Sciences, Polytechnicheskaja street 26, 194021 St.Petersburg, Russia
R. N. Kyutt
Affiliation:
Ioffe Physico-Technical Institute, Russian Academy of Sciences, Polytechnicheskaja street 26, 194021 St.Petersburg, Russia
G. N. Mosina
Affiliation:
Ioffe Physico-Technical Institute, Russian Academy of Sciences, Polytechnicheskaja street 26, 194021 St.Petersburg, Russia
N. S. Sokolov
Affiliation:
Ioffe Physico-Technical Institute, Russian Academy of Sciences, Polytechnicheskaja street 26, 194021 St.Petersburg, Russia
Yu. V. Shusterman
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180, USA
L. J. Schowalter
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180, USA
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Abstract

Epitaxial CdF2 layers, which may be used in light-emitting devices integrated with silicon, were grown by Molecular Beam Epitaxy (MBE). Characterization of the layers by Rutherford Backscattering Spectroscopy (RBS), X-ray diffraction (XRD) and Transmission Electron Microscopy (TEM) showed that optimal growth temperature lies in the range 60–80°C. The sticking coefficient of CdF2 molecules was found to decrease at temperatures above 100°C. Different modes of misfit strain relaxation were observed above and below that temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 441: Thin Films – Structure and Morphology , 1996 , 457
Copyright
Copyright © Materials Research Society 1997

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