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Structure and Properties of a-C:N Films Prepared by Pulsed Excimer Laser Deposition

Published online by Cambridge University Press:  01 January 1992

Fulin Xiong ,
R. P. H. Chang  and
C. W. White
Fulin Xiong
Affiliation:
Northwestern University, Department of Materials Science and Engineering, and Materials Research Center, Evanston, IL
R. P. H. Chang
Affiliation:
Northwestern University, Department of Materials Science and Engineering, and Materials Research Center, Evanston, IL
C. W. White
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN
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Abstract

We present results on the synthesis of a-C:N films deposited by pulsed excimer laser ablation of graphite in a nitrogen gas ambient. Analysis with RBS and forward recoil spectrometry show that the films are hydrogen-free and nitrogen can be incorporated upto 40% by varying the nitrogen gas pressure. Electron microscopy has identified these films to be amorphous. Raman spectroscopy, infrared spectroscopy, and electron energy loss spectroscopy have revealed carbon-nitrogen bonding structures. Compared to a-diamond films prepared by the same technique, the C:N films still possess the properties of high mechanical hardness, chemically inertness and good wear resistance, but incorporation of nitrogen into the films generally degrades their diamond-like properties. The results suggest that nitrogen doping effect is resulted in the films under the present process, instead of carbon-nitrogen compound formation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 285: Symposium I – Laser Ablation in Materials Processing–Fundamentals and Applications , 1992 , 587
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

1. Liu, A. Y. and Cohen, M. L, Science 245, 841 (1989).Google Scholar
2. Han, H. X. and Feldman, B. J., Solid State Communi. 65, 921 (1988).Google Scholar
3. Torng, C. J., Sivertsen, J. M., Judy, J. H., and Chang, C., J. Mat. Res. 5, 2490 (1990).Google Scholar
4. Chen, M. Y., Lin, X., Dravid, V. P., Chung, Y. W., Wong, M. S., and Sproul, W. D., (preprint, 1992).Google Scholar
5. Maya, L., Cole, D. R., and Hagaman, E. W., J. Am. Cerem. Soc. 74, 1686 (1991).Google Scholar
6. Sekine, T., Kanda, H., Bendo, Y., Yokoyama, M., and Hojon, K., J. Mat. Res. Lett. 9, 1376 (1990).Google Scholar
7. Wixon, M. R., J. Am. Ceram. Soc. 73, 1973 (1990).Google Scholar
8. Xiong, F., Wang, Y. Y., Leppert, V., and Chang, R. P. H., J. Mat. Res. (submitted, 1992).Google Scholar
9. Kaufman, J. H., Metin, S., and Saperstein, D. D., Phys. Rev. B 39, 13053 (1989).Google Scholar
10. Kim, J. O. and Achenbach, J. D., Thin Solid Films (in press, 1992).Google Scholar
11. Savvides, N., J. Appl. Phys. 59, 4133 (1986).Google Scholar
12. Tauc, J., Grigorovici, R., and Vancu, A., Phys. Status Solidi 15, 627 (1966).Google Scholar