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A structure observation of GaAs micro crystal/Se-terminated GaAlAs interface for the quantum well box structure

Published online by Cambridge University Press:  22 February 2011

Toyohiro Chikyow ,
Michihisa Lijima  and
Nobuyuki Koguchi
Toyohiro Chikyow
Affiliation:
National Research Institutefor Metals, Tsukuba Laboratories, 1-2-1 Sengen Tsukuba-shi ibaraki 305, Japan
Michihisa Lijima
Affiliation:
Tokai University, Department of Electro-optics, 1117 Kitakaname, Hiratsuka-shi Kanagawa 259-12, Japan
Nobuyuki Koguchi
Affiliation:
National Research Institutefor Metals, Tsukuba Laboratories, 1-2-1 Sengen Tsukuba-shi ibaraki 305, Japan
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Abstract

A selective growth of GaAs micro crystals was demonstrated on a Se-terminated GaAIAs surface by sequential supplies of Ga and As molecules for the quantum well box structure. After the growth, the surface consisted GaAs micro crystals with (111) facets and some Se clusters. The cross sectional investigations by the high resolution electron microscope revealed an epitaxial growth of GaAs micro crystals on the surface and a mixture of Ga2Se3 and A12Se3 layer formation at the interface of GaAs/Se-terminated GaAIAs. The selenidation process seems to be a reaction limited one. The Se cluster segregation could be avoided by selenidation in As molecule atmosphere.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 300: Symposium D1 – III-V Electronic and Photonic Device Fabrication and Performance , 1993 , 519
Copyright
Copyright © Materials Research Society 1993

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References

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