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Structure of Amorphous Semiconductor Interfaces Determined from in Situ Optical Reflectivity Measurements
Published online by Cambridge University Press: 26 February 2011
Abstract
The optical reflectivity at 6328Å of a-Si:H, a-Ge:H, a-Si:H/a-SiNx:H and a-Si :H/a-SiOx:H interfaces can be explained by a model of chemically abrupt interfaces that are macroscopica!ly rough on a scale of 10–20Å.
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