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The Structure of Defects Formed by Absorption of Crystal Dislocations in Interfaces in the HCP Metals

Published online by Cambridge University Press:  15 February 2011

D.J. Bacon ,
R.C. Pond  and
A. Serra
D.J. Bacon
Affiliation:
Materials Science and Engineering, Department of Engineering, The University of Liverpool, Brownlow Hill, Liverpool L69 3GH, U.K.
R.C. Pond
Affiliation:
Materials Science and Engineering, Department of Engineering, The University of Liverpool, Brownlow Hill, Liverpool L69 3GH, U.K.
A. Serra
Affiliation:
Department de Matematica Aplicada III, Universitat Politecnica de Catalunya, ETSE Camins, Jordi Girona 1-3, 08034 Barcelona, Spain
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Abstract

Atomic-scale computer simulation has been used to investigate the interaction of crystal dislocations with two interfaces in hexagonal-close-packed (HCP) metals, namely the {1012} twin boundary and a <1210>/90° tilt boundary that is incommensurate in the direction perpendicular to the tilt axis. Crystal dislocations are absorbed in the tilt boundary with concomitant reconstruction of their cores. In the twin boundary, a broader range of interactions is observed, including defect transmission from matrix to twin and decomposition in the interface into discrete defects. The role of crystallographic features and interfacial structure is elucidated by comparing interaction processes in the two interfaces. The core structure of interfacial defects can be complex and contributes significantly to total defect energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 578: Symposia A/C – Multiscale Phenomena in Materials - Experiments in Modeling , 1999 , 371
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1. Sutton, A.P. and Balluffi, R.W., Interfaces in Crystalline Materials, Oxford Sci. Pub., Oxford, 1995.Google Scholar
2. Serra, A. and Bacon, D.J., Phil. Mag. A, 54, 793 (1986).Google Scholar
3. Serra, A., Bacon, D.J. and Pond, R.C., Acta Metall. 36, 3183 (1988).Google Scholar
4. Serra, A., Pond, R.C. and Bacon, D.J., Acta Metall. Mater. 39, 1469 (1991).Google Scholar
5. Braisaz, T., Ruterana, P., Nouet, G., Serra, A., Komninou, Ph., Kehagias, Th. and Karakostas, Th., Phil. Mag. Lett. 74, 331 (1996).Google Scholar
6. Braisaz, T., Ruterana, P., Nouet, G. and Pond, R.C., Phil. Mag. A 75, 1075 (1997).Google Scholar
7. Serra, A. and Bacon, D.J., Phil. Mag. A 73, 333 (1996).Google Scholar
8. Pond, R.C., Bacon, D.J. and Serra, A., Acta Mater. 47, 1441 (1999).Google Scholar
9. Pond, R.C. and Hirth, J.P., Solid State Phys. 47, 287 (1994).Google Scholar
10. Hirth, J.P. and Pond, R.C., Acta Mater. 44, 4749 (1996).Google Scholar
11. Ackland, G.J., Phil. Mag. A 66, 917 (1992).Google Scholar
12. Serra, A. and Bacon, D.J., Acta Metall. Mater. 43, 4465 (1995).Google Scholar
13. Vitek, V., Crystal Lattice Defects 5, 1 (1974).Google Scholar
14. Paton, N.E. and Backofen, W.A., Metall. Trans. A 1, 2839 (1970).Google Scholar
15. Reed-Hill, R.E., Dahlberg, E.P. and Slippy, W.A., Trans. AIME. 233, 1766 (1965).Google Scholar
16. Smith, D.A., Interface Sci. 4, 11 (1990).Google Scholar
17. Beanland, R., Kiely, C.J. and Pond, R.C., in Handbook on Semiconductors, vol.3(a), p.1149, North-Holland, Amsterdam (1994).Google Scholar